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Same model may have multiple batches, images only for reference.
HN1C03FU-A(TE85L,F Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

HN1C03FU-A(TE85L,F

Part No HN1C03FU-A(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 300mA
Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 4mA, 2V
Power - Max 200mW
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number HN1C03
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1481214-HN1C03FU-A(TE85L,F
Ultra Librarian 3D Model Ultra Librarian HN1C03FU-A(TE85L,F CAD Model

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