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HN4A51JTE85LF

Part No HN4A51JTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 120V 0.1A SMV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 103371-HN4A51JTE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN4A51JTE85LF CAD Model

Description

This electronic component is a product of Toshiba Semiconductor and Storage, and it has a Win Source Part Number of 103371-HN4A51JTE85LF. It falls under the Discrete Semiconductor Products category and has a maximum power dissipation of 300mW. This component is a crucial part of electronic devices that require a reliable connection, and its maximum current collector is 100mA.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2199 $58.2735
565+ $0.2058 $116.2770
875+ $0.1987 $173.8625
1,255+ $0.1845 $231.5475
1,630+ $0.1774 $289.1620
2,035+ $0.1704 $346.7640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,600 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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