The Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component designed for use in various electronic applications. It has a power dissipation of 45W (Tc) and a drive voltage of 10V.

• Power Dissipation: 45W (Tc)
• Drive Voltage: 10V
• Polarity: N-channel
• Drain-Source Breakdown Voltage: 525V
• Continuous Drain Current: 12A (Ta)
• Gate-Source Threshold Voltage: 4V @ 1mA
• Maximum Gate Charge: 25nC @ 10V
• Maximum Input Capacitance: 1350pF @ 25V
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On @ Id, Vgs: 580 mOhm @ 6A, 10V
• Temperature Range: 150°C (TJ)
• REACH: unaffected
• Reliable and efficient: component for your electronic devices.