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Same model may have multiple batches, images only for reference.
K13A60D Real Image
Same model may have multiple batches, images only for reference.

K13A60D

Part No K13A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13A TO220SIS
Datasheet
K13A60D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 2300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070337-K13A60D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K13A60D CAD Model

Description

The Toshiba Semiconductor and Storage 070337-K13A60D is a N-channel MOSFET transistor. It has a maximum power dissipation of 50W (Tc) and a continuous drain current of 13A (Ta) @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 40nC @ 10V
  • Maximum Rds On: 430 mOhm @ 6.5A, 10V
  • Technology: Through Hole
  • Case/Package: TO-220SIS
  • Dimensions: TO-220-3 Full Pack
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.4142 $58.0414
42+ $2.8020 $117.6840
64+ $2.7143 $173.7152
88+ $2.6265 $231.1320
114+ $2.5387 $289.4118
153+ $2.2765 $348.3045
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Availability: 27,000 pieces
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