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K15A60U

Part No K15A60U
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 950pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 205793-K15A60U
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K15A60U CAD Model

Description

The K15A60U is a MOSFET semiconductor product manufactured by Toshiba Semiconductor and Storage. It is a high popular product and has a balanced supply and demand status. It is a discrete semiconductor product with a TO-220SIS package and N-Channel polarity.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 15A
  • RoHS compliant: and is known for its high performance and reliability, making it ideal for use in a variety of electronic devices.

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Shipping Information

Shipped from HK warehouse
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