This MOSFET type electronic component is manufactured by Toshiba Semiconductor and Storage and is an active product with medium popularity.

• Win Source Part Number: 205794-K16J60W
• Packaging: Tube/Rail
• Mounting: through hole
• Technology: MOSFET
• FET Feature: super junction
• Polarity: N-channel
• Power Dissipation (max): 130W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Temperature Range: 150°C (TJ)
• Case / Package: TO-3P(N)
• Dimension: TO-3P-3, SC-65-3
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current @ 25°C: 15.8A (Ta)
• Gate-Source Threshold Voltage: 3.7V @ 790μA
• Max Gate Charge: 38nC @ 10V
• Max Input Capacitance: 1350pF @ 300V
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On @ Id,Vgs: 190 mOhm @ 7.9A, 10V