The Toshiba Semiconductor and Storage 070361-K7A50D MOSFET is a high-performance N-channel polarity through-hole mounting technology component.

• This MOSFET has a maximum power dissipation of 35W (Tc) and a drain-source breakdown voltage of 500V.
• The continuous drain current @ 25°C is 7A (Ta) and the gate-source threshold voltage is 4.4V @ 1mA.
• The maximum gate-source voltage is ±30V and the maximum Rds On @ Id, Vgs is 1.22 Ohm @ 3.5A, 10V.
• This MOSFET is designed for use in discrete semiconductor products and comes in a TO-220SIS package.
• The supply and demand status is balanced.