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Same model may have multiple batches, images only for reference.
RN1112ACT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

RN1112ACT(TPL3)

Part No RN1112ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W CST3
Datasheet
RN1112ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 115009-RN1112ACT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1112ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN1112ACT(TPL3) is an NPN pre-biased transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Popularity: medium
  • Supply and Demand: balance
  • Description: reliable choice for your electronic circuit needs

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