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Same model may have multiple batches, images only for reference.
RN1601(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1601(TE85L,F)

Part No RN1601(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SM6
Datasheet
RN1601(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 104041-RN1601(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1601(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN1601(TE85L,F) is a 2 NPN - Pre-Biased (Dual) transistor with a collector-emitter breakdown voltage of 50V and a maximum current collector of 100mA.

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 250MHz
  • Typical Gain (hFE): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 300mW
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Package: SM6
  • Mounting: SMD (SMT) technology
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • Category: Discrete Semiconductor Products
  • Status: Currently active in the market.
  • Supply and Demand Status: Balanced.

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