The Toshiba Semiconductor and Storage transistor is a pre-biased NPN dual transistor with a frequency transition of 250 MHz.

• Transistor Type: Pre-biased NPN dual transistor
• Frequency Transition: 250 MHz
• Maximum Current Collector: 100 mA
• VCEO Maximum Collector-Emitter Breakdown Voltage: 50 V
• Maximum Vce (sat): 300 mV @ 250 μA and 5 mA
• Collector Cut-off Current (max): 100 nA (ICBO)
• Typical Gain (hFE) (min): 80 @ 10 mA and 5 V
• Maximum Power Dissipation: 300 mW
• Application: Suitable for use in a range of discrete semiconductor product applications.