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RN1902T5LFT

Name: RN1902T5LFT
Brand: Toshiba Semiconductor and Storage
SKU: 973326
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1902T5LFT
Manufacturer	Toshiba Semiconductor and Storage
Catalog	RF Transistors (BJT)
Description	TRANS 2NPN PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	200mW
Mounting	SMD (SMT)
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Base Product Number	RN1902
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	RN1902T5LFTCT,RN1902T5LFTTR,RN1902(T5L,F,T),RN1902T5LFTDKR
Standard Package	3,000
Win Source Part Number	973326-RN1902T5LFT
Ultra Librarian 3D Model	Ultra Librarian RN1902T5LFT CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage RN1902T5LFT is a bipolar junction transistor that is pre-biased and is designed for use in a range of electronic applications.

Product: RN1902T5LFT
Manufacturer: Toshiba Semiconductor and Storage
Type: Bipolar Junction Transistor, Pre-Biased
Voltage Rating: 50V
Maximum Power Rating: 200mW
Configuration: Dual NPN Pre-Biased
DC Current Gain: 50 @ 10mA and 5V
Frequency Transition: 250MHz
Vce Saturation: 300mV @ 250μA and 5mA
Package: 6-TSSOP, SC-88, SOT-363
Packaging: Tape and Reel

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