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RN2314(TE85L,F)

Part No RN2314(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS PREBIAS PNP 50V 0.1A USM  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 100 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SC-70
Base Product Number RN2314
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Other Names RN2314TE85LF,RN2314(TE85LF)-ND,RN2314(TE85LF)TR,RN2314(TE85LF)CT,RN2314(TE85LF),RN2314(TE85LF)DKR
Standard Package 3,000
Win Source Part Number 1141677-RN2314(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN2314(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2314(TE85L,F) is a PNP pre-biased transistor with a maximum power of 100 mW.

  • Maximum Power: 100 mW
  • Voltage Collector Emitter Breakdown: 50 V
  • Maximum Current Collector: 100 mA
  • VCE Saturation: 300mV @ 250µA, 5mA
  • Current Collector Cutoff: 500nA
  • DC Current Gain: 50 @ 10mA, 5V
  • Frequency Transition: 200 MHz
  • Mounting: SMD (SMT)
  • Category: discrete semiconductor products
  • Package: SC-70, SOT-323
  • Packaging: tape and reel
  • RoHS compliant: Yes

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2,025+ $0.1143 $231.4575
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3,530+ $0.0982 $346.6460
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Availability: 8,958 pieces
In Stock: 4,479 pieces Factory Stock: 4,479 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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