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RN2411,LF

Name: RN2411,LF
Brand: Toshiba Semiconductor and Storage
SKU: 835664
Availability: InStock
Rating: 4.91 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	RN2411,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS PNP 50V 0.1A SMINI
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
Product Status	Active
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Base Product Number	RN2411
Standard Package	3,000 pcs
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Win Source Part Number	835664-RN2411,LF
Ultra Librarian 3D Model	Ultra Librarian RN2411,LF CAD Model

Alternative Products

Description

The RN2411,LF is a pre-biased PNP bipolar transistor from Toshiba Semiconductor and Storage.

Package: Tape and reel with 3,000 pieces
Application: Discrete semiconductor applications
Maximum Power: 200mW
Collector-Emitter Breakdown Voltage: 50V
Maximum Collector Current: 100mA
Vce Saturation: 300mV @ 250μA base current and 5mA collector current
Collector Cutoff Current: 100nA
DC Current Gain: 120 @ 1mA collector current and 5V collector-emitter voltage
Frequency Transition: 200MHz
Mounting: Surface mountable
Package: TO-236-3, SC-59, SOT-23-3
Product Status: Active

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RN2411,LF

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