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Same model may have multiple batches, images only for reference.
RN2503(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2503(TE85L,F)

Part No RN2503(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SMV
Datasheet
RN2503(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 097269-RN2503(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2503(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2503(TE85L,F) is a dual PNP pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 100mA.

  • Frequency Transition: 200MHz
  • Typical Gain: 70 @ 10mA and 5V
  • Collector-Emitter Saturation Voltage: low collector-emitter saturation voltage of 300mV @ 250μA and 5mA
  • Package: SMV package
  • Maximum Power Dissipation: 300mW
  • Category: Discrete Semiconductor Products
  • Mounting: SMD (SMT) technology
  • Resistor Values (R1 and R2): 22k ohms each
  • Popularity: medium popularity rating

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13+ $9.5461 $124.0993
19+ $9.2481 $175.7139
26+ $8.9501 $232.7026
34+ $8.6521 $294.1714
45+ $7.7570 $349.0650
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