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Same model may have multiple batches, images only for reference.
RN2602(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2602(TE85L,F)

Part No RN2602(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.3W SM6
Datasheet
RN2602(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 111666-RN2602(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2602(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SMD (SMT) transistor is a high-quality electronic component that is designed to provide reliable performance in various circuit applications.

  • Frequency Transition: 200MHz
  • Transistor Type: dual PNP transistor
  • Resistor Base: 10k ohms
  • Resistor Emitter Base: 10k ohms
  • Product Family: Discrete Semiconductor Products family
  • Supply and Demand Status: balanced
  • Popularity: medium

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40+ $8.7214 $348.8560
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