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Same model may have multiple batches, images only for reference.
RN2705JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2705JE(TE85L,F)

Part No RN2705JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ESV
Datasheet
RN2705JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 098431-RN2705JE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2705JE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2705JE(TE85L,F) is an active electronic component that has sufficient supply and demand.

  • Status: Active
  • Supply and Demand: Sufficient
  • Series: RN2705
  • Manufacturer: Toshiba
  • Type: PNP pre-biased transistor
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE): 80 @ 10mA, 5V

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