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Same model may have multiple batches, images only for reference.
RN2907FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2907FE,LF(CB

Part No RN2907FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2907FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092503-RN2907FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2907FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage 431231 transistor is a surface mount device with a maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Operating Temperature Range: -40°C to 125°C
  • Package: ES6 case
  • Popularity: Medium
  • Supply and Demand: Sufficient

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