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Same model may have multiple batches, images only for reference.
RN4907,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4907,LF

Part No RN4907,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
RN4907,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 097912-RN4907,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4907,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN4907,LF is a Dual NPN and PNP Pre-Biased Transistor designed for discrete semiconductor products.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Frequency Transition: 200MHz
  • Mounting Package: SMD (SMT)
  • Resistor - base (R1) (Ohms): 10k
  • Resistor - emitter base (R2) (Ohms): 47k
  • Maximum Current Collector: 100mA
  • VCEO maximum collector-emitter breakdown voltage: 50V
  • Typical gain (hFE) (Min): 80 @ 10mA, 5V

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