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RN4982FE,LF(CT

Part No RN4982FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANS NPN/PNP PREBIAS 0.1W ES6  /  Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN4982
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN4982FE(T5LFT)CT,RN4982FELF(CBDKR,RN4982FELF(CBDKR-ND,RN4982FELF(CTDKR,RN4982FELF(CBCT,RN4982FELF(CBCT-ND,RN4982FELF(CTTR,RN4982FE,LF(CB,RN4982FE(T5LFT)TR,RN4982FE(T5LFT)DKR-ND,RN4982FE(T5L,F,T),RN4982FELF(CBTR-ND,RN4982FE(T5LFT)DKR,RN4982FELF(CTCT,RN4982FELF(CBTR,RN4982FE(T5LFT)TR-ND,RN4982FE(T5LFT)CT-ND
Standard Package 4,000
Win Source Part Number 963925-RN4982FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN4982FE,LF(CT CAD Model

Description

The RN4982FE,LF(CT) is a pre-biased dual NPN and PNP bipolar transistor array.

  • Maximum Power: 100mW
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • DC Current Gain: 50 @ 10mA and 5V
  • Frequency Transition: 250MHz
  • Vce Saturation: 300mV @ Ib, Ic of 250µA and 5mA
  • Package: SOT-563 and SOT-666
  • Ideal choice for: discrete semiconductor products like transistors - bipolar (BJT) - arrays, pre-biased.

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