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Same model may have multiple batches, images only for reference.
RN4984FE,LF(CB Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN4984FE,LF(CB

Part No RN4984FE,LF(CB
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheet
RN4984FE,LF(CB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092525-RN4984FE,LF(CB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN4984FE,LF(CB CAD Model

Description

The Toshiba Semiconductor and Storage 1092525-RN4984FE,LF(CB) is a pre-biased dual NPN and PNP transistor belonging to the discrete semiconductor products family.

  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW

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Quantity Unit Price Ext. Price
55+ $1.0996 $60.4780
130+ $0.9021 $117.2730
200+ $0.8743 $174.8600
275+ $0.8466 $232.8150
355+ $0.8177 $290.2835
475+ $0.7334 $348.3650
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