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RN4987,LF(CT

Part No RN4987,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS 0.2W US6
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz, 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1092528-RN4987,LF(CT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN4987,LF(CT CAD Model

Description

The RN4987,LF(CT is a PNP Silicon Epitaxial Planar Transistor manufactured by Toshiba Semiconductor and Storage. It's designed for switching and amplification applications.

Applications

  • Switching circuits
  • Amplification circuits
  • Inverter circuits
  • Driver circuits
  • Load switches

Features

  • Low saturation voltage
  • High DC current gain
  • Small surface mount package (SOT-23)
  • RoHS Compliant

Benefits

  • Efficient switching performance
  • High amplification capabilities
  • Compact design
  • Ease of use in automated assembly processes
  • Environmentally friendly

Additional Details

The RN4987,LF(CT transistor features a low saturation voltage, which minimizes power dissipation during switching. The high DC current gain allows for efficient amplification of small signals. The SOT-23 package is a standard surface mount package that saves board space. The datasheet specifies the collector-emitter voltage, collector current, power dissipation, and operating temperature range. It also specifies the typical and maximum values for various electrical characteristics, such as saturation voltage, current gain, and cut-off frequency.

Proper circuit design and component selection are essential for optimal performance. Refer to Toshiba's application notes for recommended circuit configurations and layout guidelines. Appropriate soldering techniques are required for the SOT-23 package. The transistor should be operated within its specified voltage, current, and power dissipation ratings to ensure reliability. The datasheet specifies the ESD sensitivity of the transistor, and appropriate ESD precautions should be taken during handling and assembly.

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Pricing & Ordering

Quantity Unit Price Ext. Price
925+ $0.0625 $57.8125
2,255+ $0.0513 $115.6815
3,485+ $0.0498 $173.5530
4,800+ $0.0482 $231.3600
6,205+ $0.0466 $289.1530
8,315+ $0.0417 $346.7355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 925 pcs
Order Increment : 1 pcs
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