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SSM3J332R

Part No SSM3J332R
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F / MOSFET P CH 30V 6A 2-3Z1A
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
Gate-Source Threshold Voltage 1.2V @ 1mA
Max Gate Charge 8.2nC @ 4.5V
Max Input Capacitance 560pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 094999-SSM3J332R
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SSM3J332R
Introduction Date July 21, 2010
ECCN EAR99
Country of Origin Thailand
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian SSM3J332R CAD Model

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage.

  • Popularity: High
  • Fake Products Risk: 56% chance in the open market
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Operating Temperature: Up to 150°C
  • Maximum Rds On: 42 mOhm @ 5A and 10V
  • Introduction Date: July 21, 2010
  • Availability: Expected until 2028
  • Usage: Commonly used part in the industry

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,320+ $0.0379 $50.0280
3,220+ $0.0311 $100.1420
4,985+ $0.0301 $150.0485
6,875+ $0.0291 $200.0625
8,870+ $0.0282 $250.1340
11,860+ $0.0253 $300.0580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 1320 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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