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Same model may have multiple batches, images only for reference.
SSM3J378R,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J378R,LF

Part No SSM3J378R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 29.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Vgs (Max) +6V, -8V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package SOT-23F
Package / Case SOT-23-3 Flat Leads
Base Product Number SSM3J378
Other Names SSM3J378RLFDKR,SSM3J378R,LF(B,SSM3J378R,LF(T,SSM3J378RLFTR,SSM3J378RLFCT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277946-SSM3J378R,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J378R,LF CAD Model

Description

The SSM3J378R,LF power MOSFET is a high-performance P-channel device that belongs to the U-MOSVI series from Toshiba Semiconductor and Storage.

  • Package: SOT-23-3 Flat Leads package
  • Drain-Source Voltage: 20 V
  • Continuous Drain Current: 6 A @ 25°C
  • Maximum Rds On: 29.8mOhm @ 3A and 4.5V
  • Maximum Gate Charge: 12.8 nC @ 4.5V
  • Maximum Vgs(th): 1V @ 1mA
  • Power Dissipation: 1W (Ta)
  • Operating Temperature Range: 150°C

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