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SSM3J66MFV,L3F

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Part No	SSM3J66MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.6 nC @ 4.5 V
Vgs (Max)	+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 10 V
Power Dissipation (Max)	150mW (Ta)
Temperature Range - Operating	150°C
Mounting	SMD (SMT)
Supplier Device Package	VESM
Package / Case	SOT-723
Base Product Number	SSM3J66
Other Names	SSM3J66MFVL3FDKR,SSM3J66MFV,L3F(B,SSM3J66MFVL3FTR,SSM3J66MFVL3FCT
Standard Package	8,000
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Win Source Part Number	1277947-SSM3J66MFV,L3F
Ultra Librarian 3D Model	Ultra Librarian SSM3J66MFV,L3F CAD Model

Alternative Products

Description

This electronic component is a MOSFET transistor with a Win Source part number of 1277947-SSM3J66MFV, L3F.

FET type: P-channel
Maximum drain to source voltage: 20 V
Continuous drain current: 800mA @ 25°C
Rds on (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Power dissipation (Max): 150mW (Ta)
Package/case: SOT-723
Supplier device package: VESM
Gate charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Operating temperature range: 150°C
HTSUS: 8541.21.0095
Manufacturer: Toshiba Semiconductor and Storage
Base product number: SSM3J66
RoHS: Non-compliant

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