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Same model may have multiple batches, images only for reference.
SSM3K01T Real Image
Same model may have multiple batches, images only for reference.

SSM3K01T

Part No SSM3K01T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A TSM
Datasheet
SSM3K01T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Max Input Capacitance 152pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 1.6A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 192928-SSM3K01T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K01T CAD Model

Description

The Toshiba SSM3K01T is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.2A (Ta) @ 25°C
  • Maximum Rds On: 120 mOhm @ 1.6A, 4V
  • Maximum Input Capacitance: 152pF @ 10V
  • Mounting: SMD (SMT)
  • Package: TSM
  • Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)

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