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Same model may have multiple batches, images only for reference.
SSM3K316T(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K316T(TE85L,F)

Part No SSM3K316T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A TSM
Datasheet
SSM3K316T(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 4.3nC @ 4V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 53 mOhm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 104778-SSM3K316T(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K316T(TE85L,F) CAD Model

Description

Toshiba Semiconductor and Storage is the manufacturer of this electronic component with Win Source Part Number 104778-SSM3K316T(TE85L,F).

  • Product Type: MOSFET
  • Polarity: N-Channel
  • Power Dissipation: 700mW (Ta)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Status: obsolete (EOL)
  • Operating Temperature: 150°C (TJ)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 4.3nC @ 4V
  • Maximum Input Capacitance: 270pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 53 mOhm @ 3A, 10V

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