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Same model may have multiple batches, images only for reference.
SSM3K37CT Real Image
Same model may have multiple batches, images only for reference.

SSM3K37CT

Part No SSM3K37CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.2A CST3
Datasheet
SSM3K37CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 12pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 100mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST3
Dimension SC-101, SOT-883
Win Source Part Number 212128-SSM3K37CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K37CT CAD Model

Description

The Toshiba Semiconductor and Storage 212128-SSM3K37CT is an N-Channel MOSFET component that operates at a maximum power dissipation of 100mW (Ta).

  • Supply and Demand Status: sufficient
  • Popularity: medium
  • Suitable for: use in various applications including Discrete Semiconductor Products and MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
910+ $0.0551 $50.1410
2,210+ $0.0453 $100.1130
3,425+ $0.0438 $150.0150
4,720+ $0.0424 $200.1280
6,100+ $0.0410 $250.1000
8,155+ $0.0368 $300.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 720,000 pieces
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