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SSM5H08TU,LF

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Part No	SSM5H08TU,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Rds On (Max) @ Id, Vgs	160mOhm @ 750mA, 4V
Vgs(th) (Max) @ Id	1.1V @ 100µA
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	500mW (Ta)
Temperature Range - Operating	150°C
Mounting	SMD (SMT)
Supplier Device Package	UFV
Package / Case	6-SMD (5 Leads), Flat Lead
Base Product Number	SSM5H08
Other Names	SSM5H08TU,LF(B,SSM5H08TULFDKR,SSM5H08TULFCT,SSM5H08TULFTR
Standard Package	3,000
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Win Source Part Number	1277956-SSM5H08TU,LF
Ultra Librarian 3D Model	Ultra Librarian SSM5H08TU,LF CAD Model

Alternative Products

Description

The Toshiba Semiconductor and Storage SSM5H08TU,LF is a MOSFET transistor used in discrete semiconductor products.

Category: Transistors - FETs, MOSFETs - Single
Series: U-MOSIII
Package: Tape & Reel
Standard Package: 3,000
Mounting Technology: SMD (SMT)
FET Type: N-Channel
Schottky Diode: Yes
Drain to Source Voltage: 20 V
Maximum Operating Temperature: 150°C
RoHS: Non-compliant

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