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Same model may have multiple batches, images only for reference.
SSM5N15FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM5N15FE(TE85L,F)

Part No SSM5N15FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100MA ESV
Datasheet
SSM5N15FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 7.8pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ESV
Dimension SOT-553
Win Source Part Number 1102313-SSM5N15FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM5N15FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 1102313-SSM5N15FE(TE85L,F) is a medium popularity N-channel MOSFET device with a balance of supply and demand.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: 1102313-SSM5N15FE(TE85L,F)
  • Popularity: medium
  • Type: N-channel MOSFET
  • Supply and Demand: balance
  • Power Dissipation (Max): 150mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: SMD (SMT)
  • Dimension: SOT-553
  • Gate-Source Voltage (Max): ±20V
  • Rds On (Max) @ Id,Vgs: 4 Ohm @ 10mA, 4V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2324 $61.6200
115+ $1.0106 $116.2190
180+ $0.9794 $176.2920
245+ $0.9483 $232.3335
320+ $0.9159 $293.0880
425+ $0.8212 $349.0100
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Availability: 14,900 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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