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HN4B102J(TE85L,F)

Part No HN4B102J(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description PB-F POWER TRANSISTOR SMV MOQ=30
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
Power - Max 750mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
Base Product Number HN4B102
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1203871-HN4B102J(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian HN4B102J(TE85L,F) CAD Model

Description

The 1203871-HN4B102J(TE85L,F) is a bipolar transistor array consisting of both NPN and PNP transistors from Toshiba Semiconductor and Storage.

  • Collector-Emitter Breakdown Voltage: 30V
  • Collector Cutoff Current: 100nA
  • DC Current Gain (NPN): 200 @ 200mA, 2V
  • DC Current Gain (PNP): 200 @ 200mA, 2V
  • Maximum Collector Current (NPN): 1.8A
  • Maximum Collector Current (PNP): 2A
  • Maximum Junction Temperature: 150°C
  • Maximum Power Dissipation: 750mW
  • Package: SC-74A, SOT-753
  • Product Status: Active
  • Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1802 $58.5650
785+ $0.1478 $116.0230
1,210+ $0.1432 $173.2720
1,670+ $0.1386 $231.4620
2,160+ $0.1340 $289.4400
2,885+ $0.1201 $346.4885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,800 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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