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SSM6J207FE TE85L,F Toshiba Semiconductor and Storage SSM6J207FE TE85L,F real image SSM6J207FE TE85L,F label picture
Same model may have multiple batches, images only for reference.
SSM6J207FE TE85L,F Toshiba Semiconductor and Storage SSM6J207FE TE85L,F real image SSM6J207FE TE85L,F label picture
SSM6J207FE TE85L,F Toshiba Semiconductor and Storage SSM6J207FE TE85L,F real image SSM6J207FE TE85L,F label picture
Same model may have multiple batches, images only for reference.

SSM6J207FE TE85L,F

Part No SSM6J207FE TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.4A ES6
Datasheet
SSM6J207FE TE85L,F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.6V @ 1mA
Max Input Capacitance 137pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 251 mOhm @ 650mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 066092-SSM6J207FE TE85L,F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J207FE TE85L,F CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a P-channel, SMD (SMT) mounted component that is used in discrete semiconductor products.

  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 1.4A (Ta)
  • Gate-Source Threshold Voltage: 2.6V @ 1mA
  • Maximum Rds On @ Id,Vgs: 251 mOhm @ 650mA, 10V
  • Supply and demand status: balanced

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