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SSM6J207FE

Part No SSM6J207FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.4A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.6V @ 1mA
Max Input Capacitance 137pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 251 mOhm @ 650mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 193073-SSM6J207FE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J207FE CAD Model

Description

This MOSFET is manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 193073-SSM6J207FE
  • Packaging: reel - TR
  • Mounting Technology: SMD (SMT)
  • Polarity: P-Channel
  • Power Dissipation (Max): 500mW (Ta)
  • Category: discrete semiconductor products
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Temperature Range - Operating: 150°C (TJ)
  • Case / Package: ES6 (1.6x1.6)
  • Dimension: SOT-563, SOT-666
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 1.4A (Ta)
  • Gate-Source Threshold Voltage: 2.6V @ 1mA
  • Max Input Capacitance: 137pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 251 mOhm @ 650mA, 10V
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1718 $58.4120
820+ $0.1411 $115.7020
1,270+ $0.1365 $173.3550
1,750+ $0.1321 $231.1750
2,265+ $0.1277 $289.2405
3,025+ $0.1146 $346.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,850 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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