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Same model may have multiple batches, images only for reference.
SSM6J502NU,LF(T Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6J502NU,LF(T

Part No SSM6J502NU,LF(T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P CH 20V 6A 2-2AA1A
Datasheet
SSM6J502NU,LF(T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 24.8nC @ 4.5V
Max Input Capacitance 1800pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 23.1 mOhm @ 4A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 1102317-SSM6J502NU,LF(T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J502NU,LF(T CAD Model

Description

The Toshiba Semiconductor and Storage SSM6J502NU,LF(T is a P-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 6A @ 25°C.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Rds On: 23.1 mOhm @ 4A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Gate Charge: 24.8nC @ 4.5V
  • Input Capacitance: 1800pF @ 10V
  • Drive Voltage: 1.5V max Rds On, Min Rds On
  • Case/Package: 6-UDFNB (2x2)
  • Mounting: Surface mount using SMD (SMT) technology
  • Application: Ideal for use in discrete semiconductor products.

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