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SSM6K202FE,LF

Part No SSM6K202FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.3A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 1.5A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Dimension SOT-563, SOT-666
Win Source Part Number 098787-SSM6K202FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6K202FE,LF CAD Model

Description

The Toshiba Semiconductor and Storage 098787-SSM6K202FE,LF is an N-channel MOSFET that is designed to be used in a variety of applications.

  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.3A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Input Capacitance: 270pF @ 10V
  • Maximum Rds On @ Id, Vgs: 85 mOhm @ 1.5A, 4V
  • Package: ES6 (1.6x1.6)
  • Dimension: SOT-563, SOT-666
  • Usage: widely used in electronic devices and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
615+ $0.0818 $50.3070
1,490+ $0.0672 $100.1280
2,305+ $0.0651 $150.0555
3,175+ $0.0630 $200.0250
4,110+ $0.0609 $250.2990
5,495+ $0.0546 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,650 pieces
MOQ: 615 pcs
Order Increment : 1 pcs
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