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Same model may have multiple batches, images only for reference.
SSM6K202FE(TE85L,F
Same model may have multiple batches, images only for reference.

SSM6K202FE(TE85L,F

Part No SSM6K202FE(TE85L,F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch Sgl 30V 2.3A ES6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-563
Continuous Drain Current (ID) 2.3 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 66 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Gate to Source Voltage (Vgs) 12 V
Input Capacitance 270 pF
Maximum Operating Temperature 150 °C
Max Power Dissipation 500 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 6
Power Dissipation 500 mW
Radiation Hardening No
Rds On Max 85 mΩ
RoHS Compliant
Win Source Part Number 981573-SSM6K202FE(TE85L,F
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSM6K202FE(TE85L,F CAD Model

Description

The Toshiba Semiconductor and Storage 981573-SSM6K202FE(TE85L,F is a surface-mount MOSFET transistor.

  • Drain-to-Source Voltage (Vdss): 30 V
  • Continuous Drain Current (ID): 2.3 A
  • Configuration: Single Element
  • Gate-to-Source Voltage (Vgs): 12 V
  • Input Capacitance: 270 pF
  • Drain-to-Source Resistance: 66 mΩ
  • Package: SOT-563
  • Maximum Power Dissipation: 500 mW
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55 to 150 °C
  • Category: Transistors - FETs, MOSFETs - RF
  • Popularity: Low

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Quantity Unit Price Ext. Price
510+ $0.1143 $58.2930
1,220+ $0.0947 $115.5340
1,900+ $0.0912 $173.2800
2,600+ $0.0889 $231.1400
3,380+ $0.0855 $288.9900
4,550+ $0.0762 $346.7100
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Availability: 2,479 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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