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Same model may have multiple batches, images only for reference.
SSM6K411TU Real Image
Same model may have multiple batches, images only for reference.

SSM6K411TU

Part No SSM6K411TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 10A
Datasheet
SSM6K411TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 1mA
Max Gate Charge 9.4nC @ 4.5V
Max Input Capacitance 710pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 7A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Dimension 6-SMD, Flat Leads
Win Source Part Number 098440-SSM6K411TU
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6K411TU CAD Model

Description

The SSM6K411TU is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Package: 6-SMD, flat lead packaged device
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 10A
  • Gate-Source Threshold Voltage: 1.2V @ 1mA
  • Maximum Gate Charge: 9.4nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 7A, 4.5V
  • Suitable for: use in various applications, including power supplies and motor control circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
365+ $0.1586 $57.8890
890+ $0.1302 $115.8780
1,375+ $0.1261 $173.3875
1,895+ $0.1221 $231.3795
2,450+ $0.1180 $289.1000
3,280+ $0.1058 $347.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 365 pcs
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