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SSM6K504NU,LF

Part No SSM6K504NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A UDFN6B
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 4.8nC @ 4.5V
Max Input Capacitance 620pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-UDFNB (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 098713-SSM6K504NU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6K504NU,LF CAD Model

Description

The Toshiba Semiconductor and Storage 098713-SSM6K504NU,LF is a N-channel MOSFET that is suitable for use in a variety of electronic applications.

  • Maximum Power Dissipation: 1.25W (Ta)
  • Continuous Drain Current @ 25°C: 9A (Ta)
  • Category: discrete semiconductor products
  • Packaging: reel - TR packaging
  • Maximum Rds On @ Id,Vgs: 19.5 mOhm @ 4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: medium
  • Design: provide reliable performance and durability

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3321 $51.4755
325+ $0.3107 $100.9775
500+ $0.3000 $150.0000
720+ $0.2786 $200.5920
935+ $0.2679 $250.4865
1,170+ $0.2572 $300.9240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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