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Same model may have multiple batches, images only for reference.
SSM6L39TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6L39TU,LF

Part No SSM6L39TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 0.8A UF6
Datasheet
SSM6L39TU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate, 1.8V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 800mA
Maximum Rds On at Id,Vgs 143 mOhm @ 600MA, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 268pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Win Source Part Number 098781-SSM6L39TU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6L39TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6L39TU,LF is an N and P-Channel logic level gate FET with a maximum power dissipation of 500mW.

  • FET Type: N and P-Channel logic level gate
  • Maximum Power Dissipation: 500mW
  • Breakdown Voltage: 20V
  • Continuous Drain Current: 800mA @ 25 degrees Celsius
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Rds On: 143 mOhm @ 600MA, 4V
  • Mounting: Surface-mount device
  • Package: UF6
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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