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Same model may have multiple batches, images only for reference.
SSM6N15AFU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N15AFU,LF

Part No SSM6N15AFU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.1A 2-2J1C
Datasheet
SSM6N15AFU,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 3.6 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 13.5pF @ 3V
Maximum Power Dissipation 300mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 100558-SSM6N15AFU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N15AFU,LF CAD Model

Description

Toshiba Semiconductor and Storage's SSM6N15AFU,LF is a 2 N-Channel (Dual) logic level gate FET with a US6 case/package.

  • FET Type: 2 N-Channel (Dual) logic level gate
  • Case/Package: US6
  • Maximum Power Dissipation: 300mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 100mA
  • Gate-Source Threshold Voltage: 1.5V @ 100μA
  • Maximum Rds On @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
  • Suitable for: Use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
655+ $0.0767 $50.2385
1,590+ $0.0630 $100.1700
2,460+ $0.0610 $150.0600
3,390+ $0.0590 $200.0100
4,380+ $0.0571 $250.0980
5,860+ $0.0512 $300.0320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 655 pcs
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