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Same model may have multiple batches, images only for reference.
SSM6N37CTD(TPL3) Real Image
Same model may have multiple batches, images only for reference.

SSM6N37CTD(TPL3)

Part No SSM6N37CTD(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 250mA
Rds On (Max) @ Id, Vgs 2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12pF @ 10V
Power - Max 140mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-SMD, Flat Leads
Supplier Device Package CST6D
Base Product Number SSM6N37
Other Names SSM6N37CTD(TPL3)TR,SSM6N37CTD (TPL3),SSM6N37CTD(TPL3)DKR,SSM6N37CTDTPL3,SSM6N37CTD(TPL3)CT
Standard Package 10,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278538-SSM6N37CTD(TPL3)
Ultra Librarian 3D Model Ultra Librarian SSM6N37CTD(TPL3) CAD Model

Description

The SSM6N37CTD(TPL3) from Toshiba Semiconductor and Storage is a 2 N-Channel (Dual) MOSFET array, designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Power Max: 140mW
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Operating Temperature Range: 150°C (TJ)

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