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SSM6N44FE

Part No SSM6N44FE
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.1A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 4 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 8.5pF @ 3V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 193175-SSM6N44FE
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N44FE CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and its win source part number is 193175-SSM6N44FE.

  • Mounting Technology: SMD (SMT)
  • FET Type: 2 N-Channel (Dual)
  • Feature: logic level gate
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Temperature Range: 150°C (TJ)
  • Case / Package: ES6 (1.6x1.6)
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 100mA
  • Gate-Source Threshold Voltage: 1.5V @ 100μA
  • Maximum Input Capacitance: 8.5pF @ 3V
  • Maximum Rds On at Id,Vgs: 4 Ohm @ 10mA, 4V
  • Popularity: Medium
  • Fake Product Threat: 44%
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
590+ $0.0853 $50.3270
1,430+ $0.0700 $100.1000
2,210+ $0.0679 $150.0590
3,045+ $0.0657 $200.0565
3,940+ $0.0635 $250.1900
5,275+ $0.0569 $300.1475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,400 pieces
MOQ: 590 pcs
Order Increment : 1 pcs
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