The SSM6P15FE(TE85L) is a P-Channel MOSFET from Toshiba Semiconductor and Storage. It's designed for load switching and power management applications where a P-channel device is required. It features low on-resistance, contributing to minimal power loss and high efficiency. The device's small form factor is ideal for use in compact or portable devices.

Applications

• Load Switching
• Power Management
• DC-DC Conversion

Features

• P-Channel MOSFET
• Low Drain-Source On-Resistance
• Small Surface Mount Package

Benefits

• High efficiency due to low on-resistance.
• Compact design suitable for portable applications.

Technical Specifications

The SSM6P15FE(TE85L) typically features a Drain-Source Voltage (VDS) rating of -20V and a Gate-Source Voltage (VGS) rating of ±8V. Drain current (ID) will vary depending on the package temperature and operating conditions. The key parameter is the Drain-Source On-Resistance (RDS(ON)). Gate Threshold Voltage (VGS(th)) is also a significant characteristic. Consult the datasheet for the SSM6P15FE(TE85L) for precise specifications.

The package is a surface mount type for easy assembly. This component complies with RoHS standards.