The TBC847B,LM is a bipolar transistor from Toshiba Semiconductor and Storage with an NPN transistor type and a maximum power of 320mW.

• Transistor Type: NPN
• Power - Max: 320mW
• Voltage - Collector Emitter Breakdown (Max): 50V
• Current - Collector (Ic) (Max): 150mA
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
• Current - Collector Cutoff (Max): 30nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Frequency - Transition: 100MHz
• Package/Case: TO-236-3, SC-59, SOT-23-3
• Operating Temperature: 150°C (TJ)