The TC51V4265DFT-50 is a high-speed, low-power 4-Megabit static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. This SRAM device is organized as 262,144 words by 16 bits, making it suitable for applications requiring fast data access and moderate memory density. The device operates at a supply voltage of 3.3V and offers a fast access time of 50ns, making it ideal for high-performance systems.

Applications

• High-speed cache memory
• Buffer memory in data acquisition systems
• Image processing
• Networking equipment
• Industrial control systems

Features

• High-speed access time: 50ns
• Low operating current
• Single 3.3V power supply
• TTL compatible inputs and outputs
• Available in a 44-pin TSOP package
• Data retention voltage: 2.0V (min)
• Operating temperature range: -40°C to +85°C

Benefits

• Enables high-performance data processing due to its fast access time.
• Reduces power consumption in portable devices and energy-sensitive applications.
• Simplifies system design with a single voltage supply requirement.
• Provides easy integration with existing TTL-based systems.
• Offers a compact form factor for space-constrained applications.
• Ensures data integrity even during power fluctuations.
• Guarantees reliable operation in harsh industrial environments.

Additional Details

The TC51V4265DFT-50 utilizes advanced CMOS technology to achieve its high speed and low power characteristics. The device supports both read and write operations, and its asynchronous operation simplifies memory control. The 44-pin TSOP package provides a compact and industry-standard footprint, making it easy to integrate into various PCB designs. The device's wide operating temperature range ensures reliable performance in demanding industrial and automotive applications. The SRAM also features a low data retention voltage, ensuring that data is preserved even when the power supply drops to a minimum level.