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TC554001AFT-85VT(YEL)

Part No TC554001AFT-85VT(YEL)
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1098278-TC554001AFT-85VT(YEL)
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TC554001AFT-85VT(YEL) CAD Model

Description

The TC554001AFT-85VT(YEL) is a 4,194,304-bit static RAM (SRAM) from Toshiba Semiconductor and Storage, organized as 524,288 words by 8 bits. It's designed for high-density, high-speed, and low-power applications, making it suitable for use in cache memory, buffer memory, and portable devices. The suffix '(YEL)' might denote a specific packaging or testing variation.

Applications:

  • Cache Memory: Used in microprocessors and other high-speed digital systems to reduce memory access latency.
  • Buffer Memory: Utilized as a temporary storage area to accommodate differences in data transfer rates between devices.
  • Portable Electronic Devices: Well-suited for battery-powered devices like laptops, digital cameras, and mobile phones.
  • Data Acquisition Systems: Employed in systems that collect and store data from sensors and other sources.
  • Industrial Automation Equipment: Integrated into industrial control systems requiring fast and reliable memory.

Features:

  • High Density: Offers a large storage capacity of 4,194,304 bits.
  • Fast Access Time: Provides a typical access time of 85 ns for rapid data retrieval.
  • Low Power Consumption: Minimizes power usage, extending battery life in portable applications.
  • Single 5V Power Supply: Operates on a single 5V power source for simplified system integration.
  • Fully Static Operation: Requires no external clock or refresh signals, simplifying the interface.
  • TTL Compatible Inputs/Outputs: Compatible with standard TTL logic levels for ease of integration.
  • Three-State Outputs: Facilitates easy memory expansion and connection to a data bus.

Benefits:

  • Improved System Performance: Fast access times enable quicker data processing and enhanced system responsiveness.
  • Extended Battery Life: Low power consumption allows for longer operating times in battery-powered devices.
  • Simplified System Design: Single power supply and TTL compatibility simplify the design and integration process.
  • Reliable Data Storage: Static design ensures stable and dependable memory storage.
  • Cost-Effective Solution: Provides a balance of performance, density, and cost-effectiveness.

Additional Details:

The TC554001AFT-85VT(YEL) is commonly available in packages such as DIP, SOJ, and TSOP to accommodate different mounting requirements. The fully static design means that data is retained as long as power is applied, without the need for refresh cycles. This simplifies the memory interface and reduces system complexity. Its low power consumption is a significant advantage in battery-powered applications. The three-state outputs allow for easy connection to a microprocessor bus, enabling efficient data transfer. This SRAM is a reliable and efficient memory solution for a wide range of applications.

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