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TC58NVG1S3EBAI4JRH

Part No TC58NVG1S3EBAI4JRH
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts (T - Z)
Description TC58NVG1S3EBAI4JRH Toshiba
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Win Source Part Number 1012089-TC58NVG1S3EBAI4JRH
Categories OEM Parts(T-Z)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TC58NVG1S3EBAI4JRH CAD Model

Description

The TC58NVG1S3EBAI4JRH is a NAND flash memory device manufactured by Toshiba (now Kioxia). It is a single-level cell (SLC) NAND flash memory chip, which provides high performance and reliability. SLC NAND stores one bit of data per cell, offering faster read/write speeds and higher endurance compared to multi-level cell (MLC) or triple-level cell (TLC) NAND flash.

Applications:

  • Embedded Systems: Used in applications requiring high reliability and fast boot times, such as industrial control systems and networking equipment.
  • Data Loggers: Employed in devices that continuously record data, such as sensor systems and monitoring equipment.
  • Medical Devices: Used in applications where data integrity and long-term storage are critical.
  • Industrial PCs: Integrated into ruggedized computers and systems for industrial environments.
  • Boot Memory: Serves as reliable and fast storage for system boot code in various devices.

Features:

  • SLC NAND Flash: Offers high performance, endurance, and data retention.
  • Compact Package: Designed for space-constrained applications.
  • High-Speed Interface: Enables fast data transfer rates.
  • Low Power Consumption: Suitable for battery-powered devices.
  • Wide Operating Temperature Range: Designed for use in harsh environments.

Benefits:

  • High Reliability: SLC NAND provides superior data integrity and long-term storage.
  • Fast Performance: Enables quick read/write operations for responsive system performance.
  • Long Endurance: Supports a high number of program/erase cycles.
  • Low Power Consumption: Extends battery life in portable devices.
  • Robust Operation: Operates reliably in a wide range of environmental conditions.

Additional Details:

The TC58NVG1S3EBAI4JRH typically has a storage capacity in the range of 1Gb to 4Gb. It uses a standard NAND flash interface. The exact operating voltage, speed, and other specifications are found in the device datasheet. Important parameters to consider when using this NAND flash memory include program/erase cycles, data retention time, and operating temperature range. Error management and wear leveling algorithms are generally required to maximize the lifespan and reliability of the device. Consult the official datasheet for detailed electrical characteristics, timing diagrams, and application notes.

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