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Same model may have multiple batches, images only for reference.
TK100A10N1,S4X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK100A10N1,S4X

Part No TK100A10N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO-220
Datasheet
TK100A10N1,S4X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 8800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 1050166-TK100A10N1,S4X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100A10N1,S4X CAD Model

Description

The supply and demand status of this product is balanced.

  • Maximum Power Dissipation: 45W (Tc)
  • Continuous Drain Current: 100A (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id,Vgs: 3.8 mOhm @ 50A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0142 $50.1420
25+ $4.1143 $102.8575
38+ $3.9857 $151.4566
52+ $3.8571 $200.5692
68+ $3.7286 $253.5448
90+ $3.3428 $300.8520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,310 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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