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Same model may have multiple batches, images only for reference.
TK100E06N1,S1X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK100E06N1,S1X

Part No TK100E06N1,S1X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 100A TO-220
Datasheet
TK100E06N1,S1X Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 10500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 50A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212851-TK100E06N1,S1X
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100E06N1,S1X CAD Model

Description

The Toshiba Semiconductor and Storage TK100E06N1,S1X is an N-channel MOSFET component manufactured by.

  • Power Dissipation: 255W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 2.3 mOhm @ 50A, 10V
  • Continuous Drain Current: 100A (Ta) @ 25°C
  • Package: TO-220
  • Mounting Type: Through Hole
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 140nC @ 10V
  • Maximum Input Capacitance: 10500pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Component Status: Active
  • Product Category: Discrete Semiconductor Products
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
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56+ $1.8014 $100.8784
86+ $1.7451 $150.0786
119+ $1.6888 $200.9672
154+ $1.6325 $251.4050
205+ $1.4636 $300.0380
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Availability: 35,783 pieces
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