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TK10A50D(STA4

Part No TK10A50D(STA4
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1529+
Reference case TO-220F
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 742559-TK10A50D(STA4
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK10A50D(STA4 CAD Model

Description

The TK10A50D is a high-voltage N-channel power MOSFET from Toshiba Semiconductor and Storage. It is designed for high-efficiency power switching applications. This MOSFET utilizes Toshiba's advanced π-MOS VII process, which provides low on-resistance and fast switching speeds, contributing to improved system efficiency and reduced power losses.

Applications:

  • Switching Power Supplies
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Motor Control
  • Lighting Ballasts

Features:

  • High Voltage: 500V Drain-Source Voltage (VDSS)
  • Low On-Resistance: RDS(on) = 0.55 Ohms (max) @ VGS = 10V
  • Fast Switching Speed: Low gate charge (Qg) for efficient high-frequency operation.
  • Avalanche Capability: Rugged avalanche characteristics for improved reliability.
  • Pb-free and RoHS compliant: Environmentally friendly design.

Benefits:

  • Improved Efficiency: Low on-resistance minimizes conduction losses, resulting in higher overall system efficiency.
  • Reduced Power Dissipation: Fast switching speed and low gate charge reduce switching losses, leading to lower power dissipation and cooler operation.
  • Enhanced Reliability: Avalanche capability provides robustness against voltage spikes and transients.
  • Simplified Design: Easy to drive and implement in various power electronic circuits.
  • Environmentally Compliant: Meets environmental standards for lead content and hazardous substances.

Additional Details:

The TK10A50D features a drain-source voltage (VDSS) of 500V and a continuous drain current (ID) of up to 10A. The gate-source voltage (VGS) is rated at ±30V. The device is typically available in a TO-220SIS package, which offers good thermal performance. The operating junction temperature range is -55°C to 150°C. Its low gate charge and gate resistance contribute to minimizing switching losses, making it suitable for high-frequency applications. The avalanche ruggedness ensures stable operation under inductive load switching conditions. It’s important to consult the manufacturer's datasheet for detailed specifications and application guidelines to ensure optimal performance and reliability in specific applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4874 $58.4880
290+ $0.4008 $116.2320
450+ $0.3881 $174.6450
620+ $0.3754 $232.7480
800+ $0.3627 $290.1600
1,065+ $0.3257 $346.8705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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