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Same model may have multiple batches, images only for reference.
TK11A55D(STA4,Q,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK11A55D(STA4,Q,M)

Part No TK11A55D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 11A TO220SIS / N-Channel 550 V 11A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 630mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number TK11A55
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK11A55D(STA4QM),TK11A55DSTA4QM
Standard Package 50
Win Source Part Number 1022400-TK11A55D(STA4,Q,M)
Ultra Librarian 3D Model Ultra Librarian TK11A55D(STA4,Q,M) CAD Model

Description

The TK11A55D(STA4,Q,M) is an N-channel MOSFET transistor designed for single applications from Toshiba Semiconductor and Storage.

  • Series: π-MOSVII
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage: 550V
  • Continuous Drain Current: 11A (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Power Dissipation: 45W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
  • Vgs (Max): ±30V
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99

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